PART |
Description |
Maker |
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
LK822-14 |
RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF6G20LS-140 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G24L-160P BLF7G24LS-160P |
Power LDMOS transistor
|
NXP Semiconductors
|
BLP15M7160P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G22L-130N |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-250P-15 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G22L-200 BLF7G22LS-200 |
Power LDMOS transistor
|
NXP Semiconductors
|
BLF7G20L-200 |
Power LDMOS transistor
|
Philips Semiconductors
|
BLP05M7200-15 |
Power LDMOS transistor
|
NXP Semiconductors
|